High hole mobility in SiGe alloys for device applications
- K. Ismail
- J.O. Chu
- et al.
- 1994
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Core-level photoemission and the structure of the Si/SiO2 interface: A reappraisal
- Mark M. Banaszak Holl
- Sunghee Lee
- et al.
- 1994
- Applied Physics Letters
PaperAtomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
- D.D. Koleske
- S. Gates
- 1994
- Applied Physics Letters
PaperAtomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
- E. Cartier
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
PaperCollisionless electron heating by radio-frequency plasma sheaths
- M. Surendra
- D. Vender
- 1994
- Applied Physics Letters
PaperFinite-element modeling of stress distribution and migration in interconnecting studs of a three-dimensional multilevel device structure
- L.T. Shi
- K.N. Tu
- 1994
- Applied Physics Letters
PaperFormation of β-SiC nanocrystals by the relaxation of Si 1-yCy random alloy layers
- A.R. Powell
- F. Legoues
- et al.
- 1994
- Applied Physics Letters
PaperInterfacial microstructures of ultrathin Ge layers on Si probed by x-ray scattering and fluorescence yield
- Z.H. Ming
- Y.L. Soo
- et al.
- 1994
- Applied Physics Letters
PaperApertureless near-field optical microscope
- F. Zenhausern
- M.P. O'Boyle
- et al.
- 1994
- Applied Physics Letters
PaperSemiconductor characterization with the scanning surface harmonic microscope
- J.P. Bourgoin
- M. Johnson
- et al.
- 1994
- Applied Physics Letters
Paper