Nonalloyed ohmic contacts to n-Si using a strained Si0.50Ge 0.50 buffer layer
- Hsing-Kuen Liou
- Edward S. Yang
- et al.
- 1993
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Lifetime measurements on silicon-on-insulator wafers
- J. Freeouf
- N. Braslau
- et al.
- 1993
- Applied Physics Letters
PaperElectromigration failure due to interfacial diffusion in fine Al alloy lines
- C.-K. Hu
- M.B. Small
- et al.
- 1993
- Applied Physics Letters
PaperLaser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes
- A. Jakubowicz
- A. Oosenbrug
- et al.
- 1993
- Applied Physics Letters
PaperStudies of dynamic magnetostriction by time-resolved scanning fiber interferometry
- M.R. Freeman
- G. Nunes Jr.
- 1993
- Applied Physics Letters
PaperSurfactant coverage and epitaxy of Ge on Ga-terminated Si(111)
- J. Falta
- M. Copel
- et al.
- 1993
- Applied Physics Letters
PaperStress induced pattern formation preceding crystallization of Te 3Se4(I) thin films
- A. Blatter
- C. Ortiz
- 1993
- Applied Physics Letters
PaperInfluence of deposition temperature on giant magnetoresistance of Fe/Cr multilayers
- S.S.P. Parkin
- B.R. York
- 1993
- Applied Physics Letters
PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
PaperLow-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
- M.M. Banaszak Holl
- P.F. Seidler
- et al.
- 1993
- Applied Physics Letters
Paper