The junction depth of concentration-dependent diffusion. Zinc in III-V compounds
- L.L. Chang
- 1964
- Solid-State Electronics
Paper
Publications
14455 results for Physical Sciences
Measurement of tunnel diode capacitance vs. voltage by switching techniques
- Conrad Lanza
- 1964
- Solid-State Electronics
PaperAnalysis of the Hydrogen Reduction of Silicon Tetrachloride Process on the Basis of a Quasi-Equilibrium Model
- T.O. Sedgwick
- 1964
- JES
PaperA note on the application of the stress dependency of wear in the wear analysis of an electrical contact
- R.G. Bayer
- W.C. Clinton
- et al.
- 1964
- Wear
PaperThe interface transport properties of Ge-GaAs heterojunctions
- L Esaki
- W.E Howard
- et al.
- 1964
- Surface Science
PaperIntervalley scattering by donor ions in germanium
- P.J. Price
- R.L. Hartman
- 1964
- Journal of Physics and Chemistry of Solids
PaperEffect of temperature on the stimulated emission from GaAs p-n junctions
- M.H. Pilkuhn
- H. Rupprecht
- et al.
- 1964
- Solid-State Electronics
PaperSome Properties of Ga2Sb-Ga2Se3 and GaSb-Ga2Te3 Alloys
- J.C. Woolley
- K.W. Blazey
- 1964
- JES
PaperAcoustic-mode scattering mobility of holes in diamond type semiconductors
- Martin Tiersten
- 1964
- Journal of Physics and Chemistry of Solids
PaperBehavior of CdS thin film transistors
- M.G. Miksic
- E.S. Schlig
- et al.
- 1964
- Solid-State Electronics
Paper