Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
- J.P. De Souza
- D.K. Sadana
- 1993
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Cyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
PaperHeteroepitaxy of β-FeSi2 on unstrained and strained Si(100) surfaces
- D.R. Peale
- R. Haight
- et al.
- 1993
- Applied Physics Letters
PaperColumnar defects in YBa2Cu3O7-δ induced by irradiation with high energy heavy ions
- R. Wheeler
- M.A. Kirk
- et al.
- 1993
- Applied Physics Letters
PaperRoom-temperature electron mobility in strained Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
PaperImproved process for high-Tc superconducting step-edge junctions
- J.Z. Sun
- W.J. Gallagher
- et al.
- 1993
- Applied Physics Letters
PaperDislocations and strain relief in compositionally graded layers
- 1993
- Applied Physics Letters
PaperStress induced pattern formation preceding crystallization of Te 3Se4(I) thin films
- A. Blatter
- C. Ortiz
- 1993
- Applied Physics Letters
PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
PaperEpitaxial Si films on Ge(100) grown via H/Cl exchange
- S. Gates
- D.D. Koleske
- et al.
- 1993
- Applied Physics Letters
Paper