Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Impact ionization and positive charge formation in silicon dioxide films on silicon
- D.J. DiMaria
- D. Arnold
- et al.
- 1992
- Applied Physics Letters
PaperOptical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy
- R. Enrique Viturro
- Michael R. Melloch
- et al.
- 1992
- Applied Physics Letters
PaperElectrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy
- N. Katzenellenbogen
- D. Grischkowsky
- 1992
- Applied Physics Letters
PaperGrowing thin magnetic films with a mask: Distinguishing between magnetic and instrumental asymmetries
- R. Allenspach
- A. Bischof
- et al.
- 1992
- Applied Physics Letters
PaperDoping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
PaperNoncontact monitoring of laser ablation using a miniature piezoelectric probe to detect photoacoustic pulses in air
- Wing P. Leung
- Andrew C. Tam
- 1992
- Applied Physics Letters
PaperCross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy
- R.M. Feenstra
- E.T. Yu
- et al.
- 1992
- Applied Physics Letters
PaperCharge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1-xGex
- Frank Stern
- Steven E. Laux
- 1992
- Applied Physics Letters
PaperInterfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys
- H.K. Liou
- X. Wu
- et al.
- 1992
- Applied Physics Letters
Paper