Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets
- A. Moser
- E.-E. Latta
- 1992
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Reactions and orientation effects of the Fe/Pd/Cu/Si, Fe/Ag/Pd/Cu/Si, Fe/Au/Pd/Cu/Si, and Fe/Pt/Pd/Cu/Si structures using (100) and (111) Si
- Chin-An Chang
- 1992
- Journal of Applied Physics
PaperCharacterization of laser vaporization plasmas generated for the deposition of diamond-like carbon
- David L. Pappas
- Katherine L. Saenger
- et al.
- 1992
- Journal of Applied Physics
PaperThe role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment-The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
PaperEffect of multilayer structure and laser pulse width on the reversible cycling of phase change optical storage media
- Kurt A. Rubin
- Dunbar P. Birnie
- et al.
- 1992
- Journal of Applied Physics
PaperThe relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films
- L. Clevenger
- A. Mutscheller
- et al.
- 1992
- Journal of Applied Physics
PaperLaser-cleaning techniques for removal of surface particulates
- Andrew C. Tam
- Wing P. Leung
- et al.
- 1992
- Journal of Applied Physics
PaperTantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
- Karen Holloway
- Peter M. Fryer
- et al.
- 1992
- Journal of Applied Physics
PaperArsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
PaperModeling of agglomeration in polycrystalline thin films: Application to TiSi2 on a silicon substrate
- T.P. Nolan
- R. Sinclair
- et al.
- 1992
- Journal of Applied Physics
Paper