Copper diffusion in amorphous thin films of 4% phosphorus-silcate glass and hydrogenated silicon nitride
- D. Gupta
- K. Vieregge
- et al.
- 1992
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1992
- Applied Physics Letters
PaperMagnetic hysteresis in thin film dc SQUID magnetometers
- J.Z. Sun
- W.J. Gallagher
- et al.
- 1992
- Applied Physics Letters
PaperElectrical profiling of Si(001) p-n junctions by scanning tunneling microscopy
- E.T. Yu
- M. Johnson
- et al.
- 1992
- Applied Physics Letters
PaperAnomalous diffusion of fluorine in silicon
- S.-P. Jeng
- T.P. Ma
- et al.
- 1992
- Applied Physics Letters
PaperBoron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistors
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- Applied Physics Letters
PaperKinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition
- S.S. Dana
- M. Liehr
- et al.
- 1992
- Applied Physics Letters
PaperEfficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface
- N. Katzenellenbogen
- D. Grischkowsky
- 1991
- Applied Physics Letters
PaperLarge anisotropy in optical properties of thin polyimide films of poly (p-phenylene biphenyltetracarboximide)
- S. Herminghaus
- D. Boese
- et al.
- 1991
- Applied Physics Letters
PaperSiO2 film decomposition reaction initiated by carbon impurities located at a Si-SiO2 interface
- S.I. Raider
- S.R. Herd
- et al.
- 1991
- Applied Physics Letters
Paper