Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- A.C. Callegari
- D.K. Sadana
- et al.
- 1991
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
The bulk modulus of C60 molecules and crystals: A molecular mechanics approach
- Rodney S. Ruoff
- Arthur L. Ruoff
- 1991
- Applied Physics Letters
PaperTransient absorption and fluorescence spectroscopy in fused silica induced by pulsed KrF excimer laser irradiation
- N. Leclerc
- C. Pfleiderer
- et al.
- 1991
- Applied Physics Letters
PaperCharacterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
PaperHighly carbon-doped p-type Ga0.5In0.5As and Ga 0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- T.P. Chin
- P.D. Kirchner
- et al.
- 1991
- Applied Physics Letters
PaperThermally stable, low-resistance NiInWNx ohmic contacts to n-type GaAs prepared by sputter deposition
- Masanori Murakami
- Naftali Lustig
- et al.
- 1991
- Applied Physics Letters
PaperWet etching of gold films compatible with high Tc superconducting thin films
- W. Eidelloth
- R.L. Sandstrom
- 1991
- Applied Physics Letters
PaperSub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
- M.B. Ketchen
- D.J. Pearson
- et al.
- 1991
- Applied Physics Letters
PaperFermi level pinning at epitaxial Si on GaAs(100) interfaces
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
PaperHigh-quality GaAs on sawtooth-patterned Si substrates
- K. Ismail
- F. Legoues
- et al.
- 1991
- Applied Physics Letters
Paper