Publications

2351 results at Applied Physics Letters

Highly carbon-doped p-type Ga_0.5In_0.5As and Ga _0.5In_0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- - T.P. Chin
  - P.D. Kirchner
  - et al.
- 1991
- Applied Physics Letters
Paper
Thermally stable, low-resistance NiInWN_x ohmic contacts to n-type GaAs prepared by sputter deposition
- - Masanori Murakami
  - Naftali Lustig
  - et al.
- 1991
- Applied Physics Letters
Paper
Wet etching of gold films compatible with high T_c superconducting thin films
- - W. Eidelloth
  - R.L. Sandstrom
- 1991
- Applied Physics Letters
Paper
Role of bubbles in laser-assisted wet etching
- - B.W. Hussey
  - B. Haba
  - et al.
- 1991
- Applied Physics Letters
Paper
Grazing angle optical emission interferometry for end-point detection
- - David Angell
  - Gottlieb S. Oehrlein
- 1991
- Applied Physics Letters
Paper
Sub-μm, planarized, Nb-AlO_x-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
- - M.B. Ketchen
  - D.J. Pearson
  - et al.
- 1991
- Applied Physics Letters
Paper
Local electrical dissipation imaged by scanning force microscopy
- - Winfried Denk
  - Dieter W. Pohl
- 1991
- Applied Physics Letters
Paper
Fermi level pinning at epitaxial Si on GaAs(100) interfaces
- - J.A. Silberman
  - T.J. De Lyon
  - et al.
- 1991
- Applied Physics Letters
Paper
Resonant indirect Fowler-Nordheim tunneling in Al_0.8Ga _0.2As barrier
- - S.S. Lu
  - K. Lee
  - et al.
- 1991
- Applied Physics Letters
Paper
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- - T.O. Sedgwick
  - P. Agnello
  - et al.
- 1991
- Applied Physics Letters
Paper