The effect of Cr underlayer thickness on magnetic and structural properties of CoPtCr thin films
- K. Johnson
- P. Ivett
- et al.
- 1990
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Electronic structure calculations for a rare earth-transition metal amorphous alloy system
- Hiroshi Tanaka
- Shinji Takayama
- 1990
- Journal of Applied Physics
PaperOutdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
PaperThermally stable ohmic contacts to n-type GaAs. VI. InW contact metal
- H.-J. Kim
- Masanori Murakami
- et al.
- 1990
- Journal of Applied Physics
PaperInfluence of the substrate orientation on Ge incorporation in molecular-beam epitaxial GaAs
- B. Lee
- S.S. Bose
- et al.
- 1990
- Journal of Applied Physics
PaperThermally stable ohmic contacts to n-type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts
- Masanori Murakami
- W.H. Price
- et al.
- 1990
- Journal of Applied Physics
PaperNonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics
PaperHelium-ion damage and nanowire fabrication in GaAs/AlGaAs heterostructures
- C.M. Knoedler
- 1990
- Journal of Applied Physics
PaperH atom reactions with GaAs 〈001〉
- Mei-Chen Chuang
- J.W. Coburn
- 1990
- Journal of Applied Physics
PaperA metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics
Paper