A model for the atomic layer epitaxy of GaAs
- Ming L. Yu
- 1993
- Thin Solid Films
Paper
Publications
24904 results for Exploratory Science
The chemisorption and reaction of GeCl4 with Si(100)
- D.A. Lapiano-Smith
- F.R. McFeely
- 1993
- Thin Solid Films
PaperAtomic layer doping for Si
- D.A. Grützmacher
- K. Eberl
- et al.
- 1993
- Thin Solid Films
PaperPotential Si atomic layer epitaxy processes using halogenated Si precursors
- D.D. Koleske
- S. Gates
- et al.
- 1993
- Thin Solid Films
PaperDopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?
- S. Gates
- D.D. Koleske
- 1993
- Thin Solid Films
PaperAmic acid doping of polyaniline: Characterization and resulting blends
- Marie Angelopoulos
- Niranjan Patel
- et al.
- 1993
- Synthetic Metals
PaperLocal structure about Mn atoms in In1-xMnxAs diluted magnetic semiconductors
- A. Krol
- Y.L. Soo
- et al.
- 1993
- Physical Review B
PaperExtreme type II superconductors. Universal properties and trends
- T. Schneider
- H. Keller
- 1993
- Physica C: Superconductivity and its applications
PaperStep morphologies on small-miscut Si(001) surfaces
- R.M. Tromp
- M.C. Reuter
- 1993
- Physical Review B
PaperAb initio valence-bond cluster model for ionic solids: Alkaline-earth oxides
- A. Lorda
- F. Illas
- et al.
- 1993
- Physical Review B
Paper