Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices
- E.T. Yu
- M. Johnson
- et al.
- 1993
- Journal of Crystal Growth
Paper
Publications
24880 results for Exploratory Science
Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy
- H.P. Meier
- R.F. Broom
- et al.
- 1993
- Journal of Crystal Growth
PaperTwo-dimensional arsenic-precipitate structures in GaAs
- M.R. Melloch
- C.L. Chang
- et al.
- 1993
- Journal of Crystal Growth
PaperGrowth studies of (Al,Ga,In)As on InP by molecular beam epitaxy
- J.P. Reithmaier
- S. Hausser
- et al.
- 1993
- Journal of Crystal Growth
PaperAn atomic model of AlCuFe, and its comparison with high-resolution electron microscope images
- David P. DiVincenzo
- William Krakow
- et al.
- 1993
- Journal of Non-Crystalline Solids
PaperRole of the initial growth mode on the dislocation structure in MBE grown ZnSe/GaAs(100)
- S. Guha
- H. Munekata
- et al.
- 1993
- Journal of Crystal Growth
PaperAtomic-scale view of AlGaAs/GaAs multilayers with cross-sectional scanning tunneling microscopy
- M. Johnson
- U. Maier
- et al.
- 1993
- Journal of Crystal Growth
PaperSolubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy
- Peter D. Kirchner
- Andreas Vaterlaus
- et al.
- 1993
- Journal of Crystal Growth
PaperSi1-x-yGexCy growth and properties of the ternary system
- A.R. Powell
- K. Eberl
- et al.
- 1993
- Journal of Crystal Growth
PaperIn0.35Ga0.65P light-emitting diodes grown by gas-source MBE
- W.Ted Masselink
- Martin Zachau
- 1993
- Journal of Crystal Growth
Paper