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- Willi Volksen
- et al.
- 2012
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Paper
Publications
14466 results for Physical Sciences
Effects of Ti addition to Sn-Ag and Sn-Cu solders
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- S.K. Kang
- et al.
- 2012
- Journal of Alloys and Compounds
PaperSynergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets
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- G. Jiang
- et al.
- 2012
- Microelectronic Engineering
PaperEffective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
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- E.T. Ryan
- et al.
- 2012
- Microelectronic Engineering
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- C.-C. Yang
- P. Flaitz
- et al.
- 2012
- Microelectronic Engineering
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- Filippos Papadatos
- Keith Wong
- et al.
- 2012
- Microelectronic Engineering
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- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
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- Heinz Schmid
- et al.
- 2012
- Journal of Crystal Growth
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- T.M. Shaw
- et al.
- 2012
- Microelectronic Engineering
Paper