A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Polytype formation in zirconium-silicon thin films
- A. Bourret
- F.M. D'Heurle
- et al.
- 1990
- Journal of Applied Physics
PaperMagnetic phase diagrams of UCu2Si2 and UNi 2Si2
- M.W. McElfresh
- L. Rebelsky
- et al.
- 1990
- Journal of Applied Physics
PaperOxidation-induced substrate strain in advanced silicon integrated-circuit fabrication
- S. Stiffler
- 1990
- Journal of Applied Physics
PaperStructure and orientation of films prepared by reactive sputtering of Ni, Fe, and NiFe in Ar/N2 mixtures
- T. Takamori
- K.K. Shih
- et al.
- 1990
- Journal of Applied Physics
PaperOrientation ratio of sputtered thin-film disks
- M. Mirzamaani
- K. Johnson
- et al.
- 1990
- Journal of Applied Physics
PaperDirect overwrite capability in transition-metal-rich side rare-earth transition amorphous films (abstract)
- Shinji Takayama
- Teruhisa Shimizu
- et al.
- 1990
- Journal of Applied Physics
PaperThe general and simplified Jones matrix representations for the high pretilt twisted nematic cell
- Alan Lien
- 1990
- Journal of Applied Physics
PaperObservation of gold evaporated on graphite (00.1) cleaved surfaces
- M. Kuwabara
- D.A. Smith
- et al.
- 1990
- Journal of Applied Physics
PaperEffects of C+ implantation on the interdiffusion and resistivity of Cu/Ni/Au thin films
- Peter Madakson
- J. Karasinski
- 1990
- Journal of Applied Physics
Paper