Atomic layer doping for Si
- D.A. Grützmacher
- K. Eberl
- et al.
- 1993
- Thin Solid Films
Paper
Publications
25372 results for Science
A model for the atomic layer epitaxy of GaAs
- Ming L. Yu
- 1993
- Thin Solid Films
PaperPotential Si atomic layer epitaxy processes using halogenated Si precursors
- D.D. Koleske
- S. Gates
- et al.
- 1993
- Thin Solid Films
PaperAmic acid doping of polyaniline: Characterization and resulting blends
- Marie Angelopoulos
- Niranjan Patel
- et al.
- 1993
- Synthetic Metals
PaperAb initio valence-bond cluster model for ionic solids: Alkaline-earth oxides
- A. Lorda
- F. Illas
- et al.
- 1993
- Physical Review B
PaperExtreme type II superconductors. Universal properties and trends
- T. Schneider
- H. Keller
- 1993
- Physica C: Superconductivity and its applications
PaperLocal structure about Mn atoms in In1-xMnxAs diluted magnetic semiconductors
- A. Krol
- Y.L. Soo
- et al.
- 1993
- Physical Review B
PaperDistortion of the core exciton by the swift electron and plasmon wake in spatially resolved electron-energy-loss scattering
- P.E. Batson
- 1993
- Physical Review B
PaperPhotoelectron forward-scattering attenuation from the Cu(001) surface
- L.J. Terminello
- J.J. Barton
- 1993
- Physical Review B
PaperStep morphologies on small-miscut Si(001) surfaces
- R.M. Tromp
- M.C. Reuter
- 1993
- Physical Review B
Paper