Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Physical Review B
Paper
Publications
24879 results for Exploratory Science
Source-wave angular-momentum effects on electron-diffraction patterns
- John J. Barton
- Louis J. Terminello
- 1992
- Physical Review B
PaperA new decision-tree classification algorithm for machine learning
- P.-L. Tu
- J.-Y. Chung
- 1992
- ICTAI 1992
Conference paperEXAFS studies of arsenic in amorphous silicon
- G.S. Cargill III
- M. Matsuura
- 1992
- Journal of Non-Crystalline Solids
PaperAnisotropic atomic structure of TbFe and TbCo amorphous alloys
- Hiroshi Tanaka
- Yoshimine Kato
- et al.
- 1992
- Journal of Non-Crystalline Solids
PaperSimulation of carbon doping of GaAs during MOVPE
- Maurizio Masi
- Harsono Simka
- et al.
- 1992
- Journal of Crystal Growth
PaperGrowth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Crystal Growth
PaperAtomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
- D.W. Kisker
- G.B. Stephenson
- et al.
- 1992
- Journal of Crystal Growth
PaperOn the numerical solution of the biharmonic equation in the plane
- Anne Greenbaum
- Leslie Greengard
- et al.
- 1992
- Physica D: Nonlinear Phenomena
PaperImproved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth
Paper