Annealing behavior of GaAs implanted with Si+ and SiF + and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- J.P. De Souza
- D.K. Sadana
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling
- Peter Madakson
- John Bruley
- 1990
- Applied Physics Letters
PaperGiant microwave losses in a YBaCuO bicrystal
- E.J. Pakulis
- S.E. Blum
- 1990
- Applied Physics Letters
PaperExcitonic effects in gain and index in GaAlAs quantum well lasers
- Morris P. Kesler
- Christoph Harder
- 1990
- Applied Physics Letters
PaperRapid measurement of static and dynamic surface forces
- William A. Ducker
- Robert F. Cook
- 1990
- Applied Physics Letters
PaperCopper microcircuit repair of opens using thermally driven exchange plating
- R.J. Von Gutfeld
- D.R. Vigliotti
- 1990
- Applied Physics Letters
PaperTunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfaces
- O. Albrektsen
- D.J. Arent
- et al.
- 1990
- Applied Physics Letters
PaperCryogenic reactive ion etching of silicon in SF6
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
PaperEffect of alignment layer conductivity on the bistability of surface-stabilized ferroelectric liquid-crystal devices
- Trieu C. Chieu
- K.H. Yang
- 1990
- Applied Physics Letters
PaperAll high Tc edge junctions and SQUIDs
- R.B. Laibowitz
- R.H. Koch
- et al.
- 1990
- Applied Physics Letters
Paper