Cryogenic reactive ion etching of silicon in SF6
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- D.K. Sadana
- J.P. De Souza
- et al.
- 1990
- Applied Physics Letters
PaperVapor phase hydrocarbon removal for Si processing
- Srinandan R. Kasi
- M. Liehr
- 1990
- Applied Physics Letters
PaperObservation of miniband formation in the CdTe/Cd1-xMn xTe quantum well system
- Alex Harwit
- C. Hsu
- et al.
- 1990
- Applied Physics Letters
PaperTantalum as a diffusion barrier between copper and silicon
- Karen Holloway
- Peter M. Fryer
- 1990
- Applied Physics Letters
PaperStability of crystals that grow or evaporate by step propagation
- R. Ghez
- H.G. Cohen
- et al.
- 1990
- Applied Physics Letters
PaperIntracavity frequency doubling of a Nd:YAG laser with an organic nonlinear optical crystal
- Stephen Ducharme
- W.P. Risk
- et al.
- 1990
- Applied Physics Letters
PaperUltraclean, integrated processing of thermal oxide structures
- M. Offenberg
- M. Liehr
- et al.
- 1990
- Applied Physics Letters
PaperOn the precursor in laser-generated ultrasound waveforms in metals
- F. Alan McDonald
- 1990
- Applied Physics Letters
PaperBlue and green cw upconversion lasing in Er:YLiF4
- T. Hebert
- R. Wannemacher
- et al.
- 1990
- Applied Physics Letters
Paper