X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Photobleaching of light-induced paramagnetic defects in amorphous silicon nitride films
- M.S. Crowder
- E.D. Tober
- et al.
- 1990
- Applied Physics Letters
PaperTemperature dependence of the electronic coherence of GaAs-GaAlAs superlattices
- E. Mendez
- F. Agulló-Rueda
- et al.
- 1990
- Applied Physics Letters
PaperRadiative recombination in surface-free n+/n-/n +GaAs homostructures
- L.M. Smith
- D.J. Wolford
- et al.
- 1990
- Applied Physics Letters
PaperConductance statistics of small-area ohmic contacts on GaAs
- N. Blanc
- P. Guéret
- et al.
- 1990
- Applied Physics Letters
PaperMaterial properties of p-type GaAs at large dopings
- Sandip Tiwari
- Steven L. Wright
- 1990
- Applied Physics Letters
PaperAnnealing behavior of GaAs implanted with Si+ and SiF + and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- J.P. De Souza
- D.K. Sadana
- et al.
- 1990
- Applied Physics Letters
PaperAnalysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling
- Peter Madakson
- John Bruley
- 1990
- Applied Physics Letters
PaperGiant microwave losses in a YBaCuO bicrystal
- E.J. Pakulis
- S.E. Blum
- 1990
- Applied Physics Letters
PaperExcitonic effects in gain and index in GaAlAs quantum well lasers
- Morris P. Kesler
- Christoph Harder
- 1990
- Applied Physics Letters
Paper