Trap creation in silicon dioxide produced by hot electrons
- D.J. DiMaria
- J.W. Stasiak
- 1989
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Effects of deuterium plasmas on silicon near-surface properties
- J.L. Lindström
- G.S. Oehrlein
- et al.
- 1989
- Journal of Applied Physics
PaperHot phonon effects in silicon field-effect transistors
- Michael Artaki
- Peter J. Price
- 1989
- Journal of Applied Physics
PaperOxidation studies of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Journal of Applied Physics
PaperThermally stable ohmic contacts to n-type GaAs. V. Metal-semiconductor field-effect transistors with NiInW ohmic contacts
- Masanori Murakami
- W.H. Price
- et al.
- 1989
- Journal of Applied Physics
PaperThermally stable ohmic contacts to n-type GaAs. IV. Role of Ni on NiInW contacts
- Yih-Cheng Shih
- Masanori Murakami
- et al.
- 1989
- Journal of Applied Physics
PaperMagnetic properties of granular Co-polymer thin films
- C. Laurent
- D. Mauri
- et al.
- 1989
- Journal of Applied Physics
PaperA photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4
- S.W. Robey
- M.A. Jaso
- et al.
- 1989
- Journal of Applied Physics
PaperThe temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
PaperElectrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
Paper