Thermally stable ohmic contacts to n-type GaAs. V. Metal-semiconductor field-effect transistors with NiInW ohmic contacts
- Masanori Murakami
- W.H. Price
- et al.
- 1989
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
- E.A. Fitzgerald
- G.P. Watson
- et al.
- 1989
- Journal of Applied Physics
PaperThe temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
PaperInfluence of crack velocity thresholds on stabilized nonequilibrium fracture
- Robert F. Cook
- 1989
- Journal of Applied Physics
PaperInert gas reactive ion etching damage to GaAs using inverted heterojunctions
- C.M. Knoedler
- L. Osterling
- et al.
- 1989
- Journal of Applied Physics
PaperSingle-crystal YBa2Cu3O7 particle formation by aerosol decomposition
- Toivo Kodas
- Abhaya Datye
- et al.
- 1989
- Journal of Applied Physics
PaperGlow-discharge optical spectroscopy as a diagnostic of sputtered permalloy film composition and saturation magnetostriction
- Ralph H. Page
- Christopher S. Gudeman
- et al.
- 1989
- Journal of Applied Physics
PaperThermal relaxation of pseudomorphic Si-Ge superlattices by enhanced diffusion and dislocation multiplication
- Subramanian S. Iyer
- F. Legoues
- 1989
- Journal of Applied Physics
PaperMagnetic properties of granular Co-polymer thin films
- C. Laurent
- D. Mauri
- et al.
- 1989
- Journal of Applied Physics
PaperAn interferometric calorimeter for thin-film thermal diffusivity measurements
- K.L. Saenger
- 1989
- Journal of Applied Physics
Paper