Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
- A. Palevski
- P. Solomon
- et al.
- 1990
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Microwave diffraction and interference in reflection using transient radiation from optoelectronically pulsed antennas
- W. Robertson
- G. Arjavalingam
- et al.
- 1990
- Applied Physics Letters
PaperBistable conditions for low-temperature silicon epitaxy
- Bernard S. Meyerson
- Franz J. Himpsel
- et al.
- 1990
- Applied Physics Letters
PaperInternal stress and elasticity of synthetic diamond films
- B.S. Berry
- W.C. Pritchet
- et al.
- 1990
- Applied Physics Letters
PaperStretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride
- Jerzy Kanicki
- M. Sankaran
- et al.
- 1990
- Applied Physics Letters
PaperGeneration of 41 mW of blue radiation by frequency doubling of a GaAlAs diode laser
- W.J. Kozlovsky
- W. Lenth
- et al.
- 1990
- Applied Physics Letters
PaperX-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
PaperPhotobleaching of light-induced paramagnetic defects in amorphous silicon nitride films
- M.S. Crowder
- E.D. Tober
- et al.
- 1990
- Applied Physics Letters
PaperTemperature dependence of the electronic coherence of GaAs-GaAlAs superlattices
- E. Mendez
- F. Agulló-Rueda
- et al.
- 1990
- Applied Physics Letters
PaperRadiative recombination in surface-free n+/n-/n +GaAs homostructures
- L.M. Smith
- D.J. Wolford
- et al.
- 1990
- Applied Physics Letters
Paper