Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Trap creation in silicon dioxide produced by hot electrons
- D.J. DiMaria
- J.W. Stasiak
- 1989
- Journal of Applied Physics
PaperNucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
- E.A. Fitzgerald
- G.P. Watson
- et al.
- 1989
- Journal of Applied Physics
PaperThermal-field-emission electron optics for nanolithography
- Mark Gesley
- 1989
- Journal of Applied Physics
PaperThermally stable ohmic contacts to n-type GaAs. IV. Role of Ni on NiInW contacts
- Yih-Cheng Shih
- Masanori Murakami
- et al.
- 1989
- Journal of Applied Physics
PaperThermally stable ohmic contacts to n-type GaAs. V. Metal-semiconductor field-effect transistors with NiInW ohmic contacts
- Masanori Murakami
- W.H. Price
- et al.
- 1989
- Journal of Applied Physics
PaperIn situ measurement of ion-beam-induced deposition of gold
- A.D. Dubner
- A. Wagner
- 1989
- Journal of Applied Physics
PaperOxidation studies of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Journal of Applied Physics
PaperElectrical characteristics of W-Si(100) Schottky barrier junctions
- M.O. Aboelfotoh
- 1989
- Journal of Applied Physics
PaperPyroelectric detection of ultraviolet laser ablation products from polymers
- P.E. Dyer
- R. Srinivasan
- 1989
- Journal of Applied Physics
Paper