A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
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- 2011
- IEDM 2011
Conference paper
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14460 results for Physical Sciences
Effects of Al and Mn impurities on Cu electromigration
- C.-K. Hu
- J. Ohm
- et al.
- 2011
- ADMETA 2011
Conference paperRacetrack memory cell array with integrated magnetic tunnel junction readout
- A. Annunziata
- M.C. Gaidis
- et al.
- 2011
- IEDM 2011
Conference paperThe materials and integration challenge in implementing & scaling high-k/metal gate transistors for high performance CMOS
- Michael Chudzik
- 2011
- ADMETA 2011
Conference paperHardware-assisted 3D TCAD for predictive capacitance extraction in 32nm SOI SRAMs
- Ajay N. Bhoj
- Rajiv Joshi
- et al.
- 2011
- IEDM 2011
Conference paperComplementary thin-base symmetric lateral bipolar transistors on SOI
- Jin Cai
- Tak H. Ning
- et al.
- 2011
- IEDM 2011
Conference paperA high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
Conference paperImprovement of solubility and biocompatibility of MnO based nanoparticles in aqueous solutions
- Kerstin Koll
- Thomas D. Schladt
- et al.
- 2011
- MRS Spring Meeting 2011
Conference paperQuasi-pyramidal texturing using phase-segregated masks
- Katherine L. Saenger
- Roy Carruthers
- et al.
- 2010
- MRS Fall Meeting 2010
Conference paper3D copper TSV integration, testing and reliability
- Mukta Farooq
- T. Graves-Abe
- et al.
- 2011
- IEDM 2011
Conference paper