Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor
- M. Liehr
- C.M. Greenlief
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Ferroelectric (Pb,Ba)Nb2O6 near the morphotropic phase boundary
- G. Burns
- F.H. Dacol
- et al.
- 1990
- Applied Physics Letters
PaperTheory of magnetic force microscope images
- David W. Abraham
- F. Alan McDonald
- 1990
- Applied Physics Letters
PaperLow-temperature silicon cleaning via hydrogen passivation and conditions for epitaxy
- Subramanian S. Iyer
- M. Arienzo
- et al.
- 1990
- Applied Physics Letters
PaperFlux creep characteristics in high-temperature superconductors
- E. Zeldov
- N. Amer
- et al.
- 1990
- Applied Physics Letters
PaperProperties and thermal stability of the SiO2/GaAs interface with different surface treatments
- A. Paccagnella
- A.C. Callegari
- et al.
- 1990
- Applied Physics Letters
PaperNanometer resolution in luminescence microscopy of III-V heterostructures
- D.L. Abraham
- A. Veider
- et al.
- 1990
- Applied Physics Letters
PaperMapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes
- Hans Brugger
- Peter W. Epperlein
- 1990
- Applied Physics Letters
PaperEffect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
PaperGa adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures
- S. Nilsson
- E. Van Gieson
- et al.
- 1989
- Applied Physics Letters
Paper