Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- Keith A. Jenkins
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Conference paper
Publications
25372 results for Science
Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Conference paperLow thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Conference paperA full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Conference paperProfile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Conference paperEnhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
Conference paperTrench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Conference paperExperimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure
- Hon-Sum Wong
- 1991
- IEDM 1991
Conference paperCharacterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
Conference paperHigh performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
Conference paper