Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Diode laser pumped blue-light source based on intracavity sum frequency generation
- W.P. Risk
- W. Lenth
- 1989
- Applied Physics Letters
PaperSuperconducting InGaAs junction field-effect transistors with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- Applied Physics Letters
PaperNovel method of patterning YBaCuO superconducting thin films
- Q.Y. Ma
- E.S. Yang
- et al.
- 1989
- Applied Physics Letters
PaperMagnetic force microscopy with 25 nm resolution
- Philip C. D. Hobbs
- David W. Abraham
- et al.
- 1989
- Applied Physics Letters
PaperRole of atomic oxygen in the low-temperature growth of YBa 2Cu3O7-δ thin films by laser ablation deposition
- G. Koren
- A. Gupta
- et al.
- 1989
- Applied Physics Letters
PaperTunnel spectroscopy of the AlGaAs-GaAs heterostructure interface
- H. Salemink
- H.P. Meier
- et al.
- 1989
- Applied Physics Letters
PaperPerformance of dc SQUIDs with resistively shunted inductance
- V. Foglietti
- W.J. Gallagher
- et al.
- 1989
- Applied Physics Letters
PaperDepolarization field and ionic effects on the bistability of surface-stabilized ferroelectric liquid-crystal devices
- K.H. Yang
- Trieu C. Chieu
- et al.
- 1989
- Applied Physics Letters
PaperHigh-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy
- H. Jaeckel
- H.P. Meier
- et al.
- 1989
- Applied Physics Letters
Paper