Boron diffusion in silicon at high concentrations
- W.A. Orr Arienzo
- R. Glang
- et al.
- 1988
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
- Sandip Tiwari
- D.J. Frank
- et al.
- 1988
- Journal of Applied Physics
PaperRemote monitoring of thermal conductivity of a powder by a flash radiometry technique
- W.P. Leung
- A.C. Tam
- 1988
- Journal of Applied Physics
PaperNew glassy features in high-Tc superconductors
- Y. Yeshurun
- Y. Wolfus
- et al.
- 1988
- Journal of Applied Physics
PaperStudies at IBM on anisotropy in single crystals of the high-temperature oxide superconductor Y1Ba2Cu3O7-x (invited)
- W.J. Gallagher
- 1988
- Journal of Applied Physics
PaperElectronic properties of Co1-xCrx
- J.S. Nelson
- C.Y. Fong
- et al.
- 1988
- Journal of Applied Physics
PaperMagnetism of metastable phases: Band theory and epitaxy (invited)
- P.M. Marcus
- V.L. Moruzzi
- 1988
- Journal of Applied Physics
PaperMagnetic properties of Y-Ba-Cu-O superconductors
- T.R. McGuire
- F. Holtzberg
- et al.
- 1988
- Journal of Applied Physics
PaperNew approaches to epitaxy of transition metals and rare earths: Heteroepitaxy on lattice-matched buffer films on semiconductors (invited)
- R.F.C. Farrow
- S.S.P. Parkin
- et al.
- 1988
- Journal of Applied Physics
PaperLocalized epitaxial growth of IrSi3 on (111) and (001) silicon
- J.J. Chu
- L.J. Chen
- et al.
- 1988
- Journal of Applied Physics
Paper