Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
- Yih-Cheng Shih
- A.C. Callegari
- et al.
- 1988
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Journal of Applied Physics
PaperMechanisms of exchange anisotropy (invited)
- A.P. Malozemoff
- 1988
- Journal of Applied Physics
PaperMeasurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling
- A.D. Marwick
- D.R. Young
- 1988
- Journal of Applied Physics
PaperOptical and electro-optic properties of cyanotolanes and cyanostilbenes: Potential infrared liquid crystals
- Shin-Tson Wu
- Robert J. Cox
- 1988
- Journal of Applied Physics
PaperInterferometric measurement of substrate heating induced by pulsed laser irradiation
- K.L. Saenger
- 1988
- Journal of Applied Physics
PaperEmission distribution, brightness, and mechanical stability of the LaB 6 triode electron gun
- Mark Gesley
- Fritz Hohn
- 1988
- Journal of Applied Physics
PaperEffect of material constants on the orientation structure of ferroelectric liquid crystal cells
- Trieu C. Chieu
- 1988
- Journal of Applied Physics
PaperAn electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors
- L.P. Trombetta
- G.J. Gerardi
- et al.
- 1988
- Journal of Applied Physics
PaperElectrical characteristics of Ti/Si(100) interfaces
- M.O. Aboelfotoh
- 1988
- Journal of Applied Physics
Paper