Dopant redistribution at Si surfaces during vacuum anneal
- M. Liehr
- M. Renier
- et al.
- 1987
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Enhanced grain growth of polycrystalline silicon at low temperature by dopant redistribution
- T.C. Chou
- C.Y. Wong
- et al.
- 1987
- Journal of Applied Physics
PaperExamination of uncoated photoresist by the low-loss electron method in the scanning electron microscope
- Oliver C. Wells
- Ping-Chin Cheng
- 1987
- Journal of Applied Physics
PaperTransient conductivity studies in tellurium thin films
- W. Pamler
- E.E. Marinero
- 1987
- Journal of Applied Physics
PaperOriented growth of niobium and molybdenum on GaAs crystals
- M. Eizenberg
- Armin Segmüller
- et al.
- 1987
- Journal of Applied Physics
PaperMagnetism and valence mixing in Eu systems with contrasting band structures
- D. DiMarzio
- M. Croft
- et al.
- 1987
- Journal of Applied Physics
PaperEffects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs
- Yih-Cheng Shih
- Masanori Murakami
- et al.
- 1987
- Journal of Applied Physics
PaperFormation of PtSi in the presence of Al
- Chin-An Chang
- 1987
- Journal of Applied Physics
PaperThe relation between positive charge and breakdown in metal-oxide-silicon structures
- Z.A. Weinberg
- T.N. Nguyen
- 1987
- Journal of Applied Physics
PaperInducing rapid epitaxy of polycrystalline silicon films deposited on 〈100〉 silicon by arsenic ion implantation
- Y. Komem
- C.Y. Wong
- et al.
- 1987
- Journal of Applied Physics
Paper