Kinetics of laser-induced chemical vapor deposition of gold
- T.T. Kodas
- T.H. Baum
- et al.
- 1987
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Localized epitaxial growth of ReSi2 on (111) and (001) silicon
- J.J. Chu
- L.J. Chen
- et al.
- 1987
- Journal of Applied Physics
PaperHole transport in a molecularly doped polymer: P-diethylaminobenzaldehyde- diphenyl hydrazone in polycarbonate
- L.B. Schein
- A. Rosenberg
- et al.
- 1986
- Journal of Applied Physics
PaperEffect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy films
- B.Z. Weiss
- K.N. Tu
- et al.
- 1986
- Journal of Applied Physics
PaperA reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects
- F.A. Houle
- 1986
- Journal of Applied Physics
PaperHigh-purity GaAs grown by molecular-beam epitaxy
- W.I. Wang
- R.F. Marks
- et al.
- 1986
- Journal of Applied Physics
PaperSiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
PaperThe measurement of effective complex refractive indices for selected metal silicides
- R.D. Frampton
- E.A. Irene
- et al.
- 1986
- Journal of Applied Physics
PaperOxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues
- T.Y. Tan
- C.Y. Kung
- 1986
- Journal of Applied Physics
PaperCross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
Paper