Publications

14 results at IEDM 2010

Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- - Yoshinori Tsuchiya
  - Nathaniel Berliner
  - et al.
- 2010
- IEDM 2010
Conference paper
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- - A. Padilla
  - G.W. Burr
  - et al.
- 2010
- IEDM 2010
Conference paper
Graphene-based fast electronics and optoelectronics
- - Ph. Avouris
  - Yu-Ming Lin
  - et al.
- 2010
- IEDM 2010
Conference paper
RF performance of short channel graphene field-effect transistor
- - Yanqing Wu
  - Yu-Ming Lin
  - et al.
- 2010
- IEDM 2010
Conference paper