The Design and Electrical Characteristics of High-Performance Single-Poly Ion-Implanted Bipolar Transistors
- Denny Duan-Lee Tang
- Tze-Chiang Chen
- et al.
- 1989
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Heterojunction Bipolar Transistors Using Si-Ge Alloys
- Subramanian S. Iyer
- Gary L. Patton
- et al.
- 1989
- IEEE T-ED
PaperInherent and Stress-Induced Leakage in Heavily Doped Silicon Junctions
- Edward Hackbarth
- Denny Duan-Lee Tang
- 1988
- IEEE T-ED
PaperWaveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron Microscope
- Paul May
- Jean-Marc Halbout
- et al.
- 1988
- IEEE T-ED
PaperDevelopment and Experimental Verification of a Two-Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFET’s
- Jean-Claude Ramirez
- Patrick J. Mcnally
- et al.
- 1988
- IEEE T-ED
PaperOn the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
PaperOxide-Thickness Determination in Thin-Insulator MOS Structures
- Bruno Ricco
- Piero Olivo
- et al.
- 1988
- IEEE T-ED
PaperHigh-Field-Induced Degradation in Ultra-Thin SiO2 Films
- Piero Olivo
- Thao N. Nguyen
- et al.
- 1988
- IEEE T-ED
PaperIA-3 First Observation of Ballistic Holes in a p-Type THETA Device
- M. Heiblum
- K. Seo
- et al.
- 1988
- IEEE T-ED
PaperIIB-1 Analysis of Picosecond and Subpicosecond MSM Photodiodes with Very Low Bias Voltage
- B.J. Van Zeghbroeck
- 1988
- IEEE T-ED
Paper