Performance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits—part I: Basic inverter
- C.T. Chuang
- 1989
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Frequency Response of Bipolar Junction Transistors after Electron-Beam irradiation
- Keith A. Jenkins
- 1989
- IEEE T-ED
PaperOn the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
PaperOxide-Thickness Determination in Thin-Insulator MOS Structures
- Bruno Ricco
- Piero Olivo
- et al.
- 1988
- IEEE T-ED
PaperHigh-Field-Induced Degradation in Ultra-Thin SiO2 Films
- Piero Olivo
- Thao N. Nguyen
- et al.
- 1988
- IEEE T-ED
PaperIA-3 First Observation of Ballistic Holes in a p-Type THETA Device
- M. Heiblum
- K. Seo
- et al.
- 1988
- IEEE T-ED
PaperMeasurement of MOSFET Channel Potential Profile
- Yew-Tong Yeow
- 1988
- IEEE T-ED
PaperIIB-1 Analysis of Picosecond and Subpicosecond MSM Photodiodes with Very Low Bias Voltage
- B.J. Van Zeghbroeck
- 1988
- IEEE T-ED
PaperIVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
PaperAn Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter
- Tze-Chiang Chen
- Suryadever Basvaiah
- et al.
- 1988
- IEEE T-ED
Paper