SiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
High-purity GaAs grown by molecular-beam epitaxy
- W.I. Wang
- R.F. Marks
- et al.
- 1986
- Journal of Applied Physics
PaperEffect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy films
- B.Z. Weiss
- K.N. Tu
- et al.
- 1986
- Journal of Applied Physics
PaperDisilicide solid solutions, phase diagram, and resistivities. I. TiSi 2-WSi2
- P. Gas
- F.J. Tardy
- et al.
- 1986
- Journal of Applied Physics
PaperA reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects
- F.A. Houle
- 1986
- Journal of Applied Physics
PaperDoping dependence of the schottky-barrier height of ti-pt contacts to n-gallium arsenide
- R.F. Broom
- H.P. Meier
- et al.
- 1986
- Journal of Applied Physics
PaperRutherford backscattering studies of plasma-etched silicon
- Gottlieb S. Oehrlein
- 1986
- Journal of Applied Physics
PaperStability of oxides grown on tantalum silicide surfaces
- A. Cros
- K.N. Tu
- 1986
- Journal of Applied Physics
PaperElectron heating in silicon nitride and silicon oxynitride films
- D.J. DiMaria
- J.R. Abernathey
- 1986
- Journal of Applied Physics
PaperHole transport in a molecularly doped polymer: P-diethylaminobenzaldehyde- diphenyl hydrazone in polycarbonate
- L.B. Schein
- A. Rosenberg
- et al.
- 1986
- Journal of Applied Physics
Paper