Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Carrier lifetime versus ion-implantation dose in silicon on sapphire
- F.E. Doany
- D. Grischkowsky
- et al.
- 1987
- Applied Physics Letters
PaperOrigin of the band-edge states in [001] thin superlattices of GaAs/AlAs
- J.S. Nelson
- C.Y. Fong
- et al.
- 1987
- Applied Physics Letters
PaperInhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs
- H. Munekata
- Armin Segmüller
- et al.
- 1987
- Applied Physics Letters
PaperElectrical measurement of the formation of the platinum-rich metal silicides by metal-silicon reaction
- P. Gas
- J. Tardy
- et al.
- 1987
- Applied Physics Letters
PaperFar infrared spectroscopy with subpicosecond electrical pulses on transmission lines
- R. Sprik
- I.N. Duling
- et al.
- 1987
- Applied Physics Letters
PaperEffect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimony
- Y. Komem
- H.B. Harrison
- 1987
- Applied Physics Letters
PaperRapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
PaperMasked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors
- Alan C. Warren
- J. Woodall
- et al.
- 1987
- Applied Physics Letters
PaperDependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Applied Physics Letters
Paper