Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Conference paper
Publications
26880 results for Science
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
Conference paperFtir studies of molecular assemblies on solid surfaces
- V.M. Hallmark
- L.B. Shih
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperRecent advances in high temperature polymers for microelectronic applications
- Jeff W. Labadie
- J.L. Hedrick
- et al.
- 1989
- International SAMPE Electronics Conference 1989
Conference paperThermally stimulated current studies of charge transport in polysilanes
- P.N. Sanda
- L. Samuel
- et al.
- 1989
- International SAMPE Electronics Conference 1989
Conference paperInput queueing of an internally non-blocking packet switch with two priority classes
- J.S.-C. Chen
- R. Guérin
- 1989
- IEEE INFOCOM 1989
Conference paperIr reflectance properties of weakly and strongly absorbing surface films
- Yu-Sze Yen
- James S. Wong
- 1989
- Proceedings of SPIE 1989
Conference paperOn the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
- C.T. Chuang
- P.F. Lu
- 1989
- IEDM 1989
Conference paperAn economy for flow control in computer networks
- Donald F. Ferguson
- Christos Nikolaou
- et al.
- 1989
- IEEE INFOCOM 1989
Conference paperOrganic photoconductors for electrophotographic printing
- J. Campbell
- Todd Guion
- 1989
- International SAMPE Electronics Conference 1989
Conference paper