Inherent and Stress-Induced Leakage in Heavily Doped Silicon Junctions
- Edward Hackbarth
- Denny Duan-Lee Tang
- 1988
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Development and Experimental Verification of a Two-Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFET’s
- Jean-Claude Ramirez
- Patrick J. Mcnally
- et al.
- 1988
- IEEE T-ED
PaperOn the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
PaperMeasurement of MOSFET Channel Potential Profile
- Yew-Tong Yeow
- 1988
- IEEE T-ED
PaperWaveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron Microscope
- Paul May
- Jean-Marc Halbout
- et al.
- 1988
- IEEE T-ED
PaperIVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
PaperThe Potential of Complementary Heterostructure FET IC's
- Richard A. Kiehl
- W. Michael Kwapien
- et al.
- 1987
- IEEE T-ED
PaperVA-6 Investigation of Stress Effects on the DC Characteristics of GaAs MESFET's Through the Use of Externally Applied Loads
- T.N. Jackson
- Jean-Claude Ramirez
- et al.
- 1987
- IEEE T-ED
PaperMethodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar Transistors
- G.P. Li
- E. Hackbarth
- et al.
- 1987
- IEEE T-ED
PaperIVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED
Paper