Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
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- 2010
- IEDM 2010
Conference paper
Publications
14466 results for Physical Sciences
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Conference paperReliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding
- K.N. Chen
- T.M. Shaw
- et al.
- 2010
- IEDM 2010
Conference paperComparative study of CVD TiN vs. ALD TiN for contact metallization in 32nm node and beyond
- Valli Arunachalam
- Filippos Papadatos
- et al.
- 2010
- ADMETA 2010
Conference paperSwitching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
Conference paperGraphene-based fast electronics and optoelectronics
- Ph. Avouris
- Yu-Ming Lin
- et al.
- 2010
- IEDM 2010
Conference paperSmaller, smarter, faster, and more accurate: The new overlay metrology
- 2010
- SPIE Advanced Lithography 2010
Conference paperAn anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs
- Zihong Liu
- Paul Chang
- et al.
- 2010
- IEDM 2010
Conference paperSimultaneous measurement of optical properties and geometry of resist using multiple scatterometry gratings
- Alok Vaid
- Matthew Sendelbach
- et al.
- 2010
- SPIE Advanced Lithography 2010
Conference paperBreakthrough reduction of low-k damage with cryoplasma ashing
- Francesca Iacopi
- Jai Hyuk Choi
- et al.
- 2010
- ADMETA 2010
Conference paper