Buried-trench DRAM cell using a self-aligned epitaxy over trench technology
- N.C.-C. Lu
- T.V. Rajeevakumar
- et al.
- 1988
- IEDM 1988
Conference paper
Publications
26880 results for Science
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Conference paperVariable-size shallow trench isolation (STI) technology with diffused sidewall doping for submicron CMOS
- B. Davari
- C. Koburger
- et al.
- 1988
- IEDM 1988
Conference paperPerformance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits
- C.T. Chuang
- 1988
- IEDM 1988
Conference paperBallistic transport of electrons and holes
- M. Heiblum
- 1988
- IEDM 1988
Conference paperBroadband dielectric measurements with picosecond transient radiation
- G. Arjavalingam
- Y. Pastol
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperSpace charge associated with resonant tunneling
- Peter J. Price
- 1988
- Physical Review B
PaperTight-binding study of the anomalous phonon spectrum of barium
- K. Schwartzman
- P.C. Pattnaik
- 1988
- Physical Review B
PaperMonte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
- Massimo V. Fischetti
- Steven E. Laux
- 1988
- Physical Review B
PaperSelf-consistent dynamic image potential in tunneling
- B.N.J. Persson
- A. Baratoff
- 1988
- Physical Review B
Paper