Growth and defect chemistry of amorphous hydrogenated silicon
- Bruce A. Scott
- Jeffrey A. Reimer
- et al.
- 1983
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Silicon oxidation studies: A revised model for thermal oxidation
- E.A. Irene
- 1983
- Journal of Applied Physics
PaperGrowth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
- M. Heiblum
- E. Mendez
- et al.
- 1983
- Journal of Applied Physics
PaperPhotolithography experiments using forced Rayleigh scattering
- M. Levenson
- 1983
- Journal of Applied Physics
PaperReducing the grain size of polycrystalline lead films by the use of barriers to grain growth
- Maria Ronay
- C.M. Serrano
- 1983
- Journal of Applied Physics
PaperThe preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition
- B.S. Meyerson
- B.A. Scott
- et al.
- 1983
- Journal of Applied Physics
PaperInterface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
- J.E.E. Baglin
- F.M. D'Heurle
- et al.
- 1983
- Journal of Applied Physics
PaperWall oscillations of domain lattices in underdamped garnet films
- B.E. Argyle
- W. Jantz
- et al.
- 1983
- Journal of Applied Physics
PaperTemperature dependence of structural and electrical properties of Ta-Si thin alloy films
- T. Tien
- G. Ottaviani
- et al.
- 1983
- Journal of Applied Physics
PaperInterdiffusion-induced surface morphology in lead-alloy Josephson tunnel junction electrodes
- H.-C.W. Huang
- R.G. Schad
- 1983
- Journal of Applied Physics
Paper