Publications

2360 results at Journal of Applied Physics

Interface trap generation in silicon dioxide when electrons are captured by trapped holes
- - S.K. Lai
- 1983
- Journal of Applied Physics
Paper
Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation
- - H.T.G. Hentzell
  - K.N. Tu
- 1983
- Journal of Applied Physics
Paper
Effect of silicon orientation and hydrogen anneal on tunneling from Si into SiO₂
- - Z.A. Weinberg
  - A. Hartstein
- 1983
- Journal of Applied Physics
Paper
Reducing the grain size of polycrystalline lead films by the use of nucleants
- - Maria Ronay
  - C.F. Aliotta
  - et al.
- 1982
- Journal of Applied Physics
Paper
Structure of a Nb oxide tunnel barrier in a Josephson junction
- - T.S. Kuan
  - S.I. Raider
  - et al.
- 1982
- Journal of Applied Physics
Paper
NiSi formation at the silicide/Si interface on the NiPt/Si system
- - G. Ottaviani
  - K.N. Tu
  - et al.
- 1982
- Journal of Applied Physics
Paper
Growth "kinetics" and growth mechanisms for disilicide layers obtained through implantation
- - F.M. D'Heurle
  - C.S. Petersson
  - et al.
- 1982
- Journal of Applied Physics
Paper
Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability
- - C.S. Petersson
  - J.E.E. Baglin
  - et al.
- 1982
- Journal of Applied Physics
Paper
Hot electrons in a GaAs heterolayer at low temperature
- - Peter J. Price
- 1982
- Journal of Applied Physics
Paper
Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation
- - S.E. Babcock
  - K.N. Tu
- 1982
- Journal of Applied Physics
Paper