Probing the transition layer at the SiO2-Si interface using core level photoemission
- G. Hollinger
- F.J. Himpsel
- 1984
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructures
- E. Mendez
- P.J. Price
- et al.
- 1984
- Applied Physics Letters
PaperTransient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters
PaperLaser detection of diatomic products of plasma sputtering and etching
- R.E. Walkup
- Ph. Avouris
- et al.
- 1984
- Applied Physics Letters
PaperSynchrotron photoemission investigation: Fluorine on silicon surfaces
- J.F. Morar
- F.R. McFeely
- et al.
- 1984
- Applied Physics Letters
PaperIV curves of long annular Josephson junctions
- A. Davidson
- N.F. Pedersen
- 1984
- Applied Physics Letters
PaperDiffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
PaperRaman spectroscopy of PtSi formation at the Pt/Si(100) interface
- J.C. Tsang
- Y. Yokota
- et al.
- 1984
- Applied Physics Letters
PaperChanneling in low energy boron ion implantation
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1984
- Applied Physics Letters
PaperInteraction in Cu/Al and Pt/Cu/Al thin films: Competing oxygen effects and preferential reaction between Pt and CuAl alloy
- Chin-An Chang
- 1984
- Applied Physics Letters
Paper