High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
- M. Heiblum
- E. Mendez
- et al.
- 1984
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Probing the transition layer at the SiO2-Si interface using core level photoemission
- G. Hollinger
- F.J. Himpsel
- 1984
- Applied Physics Letters
PaperTransient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters
PaperPhotothermal spectroscopy using a pyroelectric thin-film detector
- H. Coufal
- 1984
- Applied Physics Letters
PaperLaser produced plasma in crystalline α-Al2O3 and aluminum metal
- Joshua E. Rothenberg
- Gad Koren
- 1984
- Applied Physics Letters
PaperMetal-amorphous silicon-silicon tunnel rectifier
- E.S. Yang
- Q.H. Hua
- et al.
- 1984
- Applied Physics Letters
PaperDiffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
PaperMolecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
- W.I. Wang
- 1984
- Applied Physics Letters
PaperTemperature dependence of the electron mobility in GaAs-GaAlAs heterostructures
- E. Mendez
- P.J. Price
- et al.
- 1984
- Applied Physics Letters
PaperLaser detection of diatomic products of plasma sputtering and etching
- R.E. Walkup
- Ph. Avouris
- et al.
- 1984
- Applied Physics Letters
Paper