Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
IV curves of long annular Josephson junctions
- A. Davidson
- N.F. Pedersen
- 1984
- Applied Physics Letters
PaperStudy of silicon contamination and near-surface damage caused by CF 4/H2 reactive ion etching
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1984
- Applied Physics Letters
PaperPhotothermal spectroscopy using a pyroelectric thin-film detector
- H. Coufal
- 1984
- Applied Physics Letters
PaperResonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Applied Physics Letters
PaperDiffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
PaperLaser detection of diatomic products of plasma sputtering and etching
- R.E. Walkup
- Ph. Avouris
- et al.
- 1984
- Applied Physics Letters
PaperLaser produced plasma in crystalline α-Al2O3 and aluminum metal
- Joshua E. Rothenberg
- Gad Koren
- 1984
- Applied Physics Letters
PaperTemperature dependence of the electron mobility in GaAs-GaAlAs heterostructures
- E. Mendez
- P.J. Price
- et al.
- 1984
- Applied Physics Letters
PaperSynchrotron photoemission investigation: Fluorine on silicon surfaces
- J.F. Morar
- F.R. McFeely
- et al.
- 1984
- Applied Physics Letters
Paper