Growth and dissolution kinetics of ternary III-V heterostructures formed by liquid phase epitaxy. III. Effects of temperature programming
- R. Ghez
- M.B. Small
- 1982
- Journal of Applied Physics
Paper
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2360 results at Journal of Applied Physics
Angular dependence of GdFe and GdCo FMR spectra
- W. Ng
- R.F. Soohoo
- et al.
- 1982
- Journal of Applied Physics
PaperEffects of hydrogenation on lightly doped polycrystalline silicon
- D.R. Campbell
- J.C.M. Hwang
- et al.
- 1982
- Journal of Applied Physics
PaperThermal stability of Pd2Si and PdSi in thin film and in bulk diffusion couples
- K.N. Tu
- 1982
- Journal of Applied Physics
PaperExcitation spectrum of ferromagnetic Heisenberg chains
- T. Schneider
- E. Stoll
- 1982
- Journal of Applied Physics
PaperDiffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films
- F.M. D'Heurle
- S. Petersson
- et al.
- 1982
- Journal of Applied Physics
PaperEnhanced electron injection into SiO2 layers using granular metal films
- C. Falcony
- D.J. Dimaria
- et al.
- 1982
- Journal of Applied Physics
PaperPreparation and properties of coevaporated amorphous Co-Zr thin films
- R. Krishnan
- M. Tarhouni
- et al.
- 1982
- Journal of Applied Physics
PaperSchottky barrier of nonuniform contacts to n-type and p-type silicon
- R.D. Thompson
- K.N. Tu
- 1982
- Journal of Applied Physics
PaperIrSi1.75 a new semiconductor compound
- S. Petersson
- J.A. Reimer
- et al.
- 1982
- Journal of Applied Physics
Paper