Photoacoustic pulse generation and probe-beam deflection for ultrasonic velocity measurements in liquids
- W. Zapka
- A.C. Tam
- 1982
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy
- Chin-An Chang
- 1982
- Applied Physics Letters
PaperEvidence for a parallel path oxidation mechanism at the Si-SiO2 interface
- E.A. Irene
- 1982
- Applied Physics Letters
PaperGrowth kinetics of oxidation-induced stacking faults in silicon: A new concept
- T.Y. Tan
- U. Gösele
- 1981
- Applied Physics Letters
PaperA technique for comparing the bulk and surface structure of defects in thin films using the scanning transmission electron microscope.
- M.M.J. Treacy
- W. Krakow
- et al.
- 1981
- Applied Physics Letters
PaperIdentification of electron traps in thermal silicon dioxide films
- A. Hartstein
- D.R. Young
- 1981
- Applied Physics Letters
PaperKinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
- B.A. Scott
- R.M. Plecenik
- et al.
- 1981
- Applied Physics Letters
PaperLack of importance of ambient gases on picosecond laser-induced phase transitions of silicon
- J.M. Liu
- R. Yen
- et al.
- 1981
- Applied Physics Letters
PaperEffect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface
- Chin-An Chang
- M. Heiblum
- et al.
- 1981
- Applied Physics Letters
PaperMeasurement of the velocity distribution of sputtered Na atoms from NaCl by Doppler shift laser fluorescence
- Ming L. Yu
- D. Grischkowsky
- et al.
- 1981
- Applied Physics Letters
Paper