SHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.
- T.O. Sedgwick
- R. Kalish
- et al.
- 1983
- MRS Proceedings 1983
Conference paper
Publications
26944 results for Science
LASER-SOLID INTERACTIONS: LOCALIZATION OF MOMENTUM AND OF ENERGY.
- J.A. Van Vechten
- 1983
- MRS Proceedings 1983
Conference paperLASER-INDUCED FLUORESCENCE DETECTION OF DIATOMIC PRODUCTS OF REACTIVE ION ETCHING: SiN, SiO, AND SiF.
- R.E. Walkup
- Ph. Avouris
- et al.
- 1983
- MRS Symposium 1983
Conference paperSTUDY OF AVALANCHE BREAKDOWN IN SCALED N-MOSFETS.
- S.E. Laux
- F.H. Gaensslen
- 1983
- IEDM 1983
Conference paperRAPID ANNEALING OF SILICON.
- R.T. Hodgson
- V.R. Deline
- et al.
- 1983
- MRS Proceedings 1983
Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.
- S. Cohen
- T.O. Sedgwick
- et al.
- 1983
- MRS Proceedings 1983
Conference paperOptics for machine vision
- T.C. Strand
- 1989
- Proceedings of SPIE 1989
Conference paperThe use of ronchi rulings for high precision, two-dimensional galvo deflection systems
- D.J. Bernays
- 1989
- Proceedings of SPIE 1989
Conference paperLow-temperature properties and localization effects in amorphous thin films of W-Re
- H. Raffy
- R.B. Laibowitz
- 1984
- Physical Review B
PaperInelastic scattering of slow electrons from Si(111) surfaces
- B.N.J. Persson
- J.E. Demuth
- 1984
- Physical Review B
Paper