Background in semiconductor devices
- J.P.F. Sellschop
- J.F. Ziegler
- 1981
- Nuclear Instruments and Methods
Paper
Publications
26944 results for Science
Adsorption of molecular nitrogen on nickel. II. Comparison of photoemission for N2/Ni(100) to CO/Ni(100) and to theory
- C.R. Brundle
- P.S. Bagus
- et al.
- 1981
- Physical Review B
PaperAdsorption of molecular nitrogen on nickel. I. Cluster-model theoretical studies
- K. Hermann
- P.S. Bagus
- et al.
- 1981
- Physical Review B
PaperMagnetoresistance and Hall effect in tetramethyl-tetraselenafulvalene-phosphorus hexafloride [(TMTSF)2PF6]
- P.M. Chaikin
- P. Haen
- et al.
- 1981
- Physical Review B
Paper1T-TaS2 charge-density-wave metal-insulator transition and Fermi-surface modification observed by photoemission
- R.A. Pollak
- D.E. Eastman
- et al.
- 1981
- Physical Review B
PaperPair shot noise and zero-point Johnson noise in Josephson junctions
- Richard F. Voss
- Richard A. Webb
- 1981
- Physical Review B
PaperElectronic structure of ideal and relaxed surfaces of ZnO: A prototype ionic wurtzite semiconductor and its surface properties
- I. Ivanov
- J. Pollmann
- 1981
- Physical Review B
PaperMagnetoconductive effects in an effectively two-dimensional system. Weak Anderson localization
- Zvi Ovadyahu
- Yoseph Imry
- 1981
- Physical Review B
PaperSurface states on reconstructed diamond (111)
- F.J. Himpsel
- D.E. Eastman
- et al.
- 1981
- Physical Review B
PaperInterface roughening and random-field instabilities in Ising systems in three or less dimensions
- K. Binder
- Y. Imry
- et al.
- 1981
- Physical Review B
Paper