Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- D.J. DiMaria
- J.M. Aitken
- et al.
- 2008
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Some temperature-dependent properties of niobium tunnel junctions
- R.F. Broom
- 2008
- Journal of Applied Physics
PaperTransparency of thin metal films on semiconductor substrates
- H.J. Hovel
- 2008
- Journal of Applied Physics
PaperHigh-field capture of electrons by Coulomb-attractive centers in silicon dioxide
- T.H. Ning
- 2008
- Journal of Applied Physics
PaperApplication of synchrotron radiation to x-ray lithography
- E. Spiller
- D.E. Eastman
- et al.
- 2008
- Journal of Applied Physics
PaperInfluence of the secondary electron emission coefficient of argon on Paschen breakdown curves in ac plasma panels for neon+0.1% argon mixture
- O. Sahni
- C. Lanza
- 2008
- Journal of Applied Physics
PaperDetection of stored momentum in magnetic bubbles by a bias jump effect
- A.P. Malozemoff
- S. Maekawa
- 2008
- Journal of Applied Physics
PaperContact metallurgy for shallow junction Si devices
- C.J. Kircher
- 2008
- Journal of Applied Physics
PaperCalculated spectral dependence of gain in excited gaAs
- Frank Stern
- 2008
- Journal of Applied Physics
PaperSpecimen replication for electron microscopy using x rays and x-ray resist
- Ralph Feder
- David Sayre
- et al.
- 2008
- Journal of Applied Physics
Paper