22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Conference paper
Publications
14465 results for Physical Sciences
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
Conference paperMOSFET performance scaling: Limitations and future options
- Dimitri A. Antoniadis
- Ali Khakifirooz
- 2008
- IEDM 2008
Conference paperImproved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation
- Xiaojun Yu
- Shu-Jen Han
- et al.
- 2008
- IEDM 2008
Conference paperMobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices
- Zhihong Chen
- Joerg Appenzeller
- 2008
- IEDM 2008
Conference paperA 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
Conference paperGate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
Conference paperDevice-oriented directed self-assembly of lamella microdomains from a block copolymer containing hybrid
- Ho-Cheol Kim
- Joy Cheng
- et al.
- 2008
- SPIE Advanced Lithography 2008
Conference paperExperimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniques
- Ryosuke Iijima
- Mariko Takayanagi
- 2008
- IEDM 2008
Conference paperHigh-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Conference paper