High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Conference paper
Publications
14466 results for Physical Sciences
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Conference paperA novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications
- Chengwen Pei
- Roger Booth
- et al.
- 2008
- ICSICT 2008
Conference paperFingerprint verification using SIFT features
- Unsang Park
- Sharath Pankanti
- et al.
- 2008
- SPIE Defense + Security 2008
Conference paperElectromigration reliability in nanoscale Cu interconnects
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- MRS Fall Meeting 2007
Conference paperDemonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Conference paperChallenges of implementing contour modeling in 32nm technology
- Daniel Fischer
- Geng Han
- et al.
- 2008
- SPIE Advanced Lithography 2008
Conference paperCMOS gate height scaling
- Zhibin Ren
- K. Schonenberg
- et al.
- 2008
- ICSICT 2008
Conference paperEvaluation of 32nm Advanced immersion lithography pellicles
- N. Zhou
- K. Racette
- et al.
- 2008
- SPIE Photomask Technology + EUV Lithography 2008
Conference paperTowards schottky-barrier source/drain MOSFETs
- Mikael Östling
- Valur Gudmundsson
- et al.
- 2008
- ICSICT 2008
Conference paper