Why the close-packed Ni(111) surface dissociatively chemisorbs oxygen and nucleates oxide faster than the more open Ni(100) surface
- C.R. Brundle
- 1985
- JVSTA
Paper
Publications
3555 results for Materials Discovery
Interfacial reaction between amorphous silicon and palladium thin films
- H.T.G. Hentzell
- P.A. Psaras
- et al.
- 1985
- Materials Letters
PaperEffects of biased cosputtering on resistivity and step coverage in tungsten silicide films
- K.W. Choi
- K.Y. Ahn
- 1985
- JVSTA
PaperSummary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couples
- H.-O. Blom
- S. Berg
- et al.
- 1985
- JVSTA
PaperHighly selective argon-oxygen ion beam etching process for Pb alloys
- D.F. Moore
- H.P. Dietrich
- et al.
- 1985
- JVSTA
PaperHigh resolution photoemission investigation: The oxidation of W
- Guy Hollinger
- F.J. HimDsel
- et al.
- 1985
- JVSTA
PaperSummary Abstract: The interaction mechanism of inelastic electron tunneling spectroscopy probed by high resolution electron energy loss spectroscopy
- M. Liehr
- P.A. Thiry
- et al.
- 1985
- JVSTA
PaperThe etching of Cu(100) with Cl2
- Harold F. Winters
- 1985
- JVSTA
PaperEffect of ion bombardment during deposition on the x-ray microstructure of thin silver films
- T.C. Huang
- G. Lim
- et al.
- 1985
- JVSTA
PaperSummary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar system
- K. Kehler
- J.W. Coburn
- et al.
- 1985
- JVSTA
Paper