Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)
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- 2008
- Journal of Applied Physics
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Publications
2360 results at Journal of Applied Physics
The role of chemisorption in plasma etching
- Harold F. Winters
- 2008
- Journal of Applied Physics
PaperThermal reemission of trapped electrons in SiO2
- T.H. Ning
- 2008
- Journal of Applied Physics
PaperElectron trapping in SiO2 due to electron-beam deposition of aluminum
- Tak H. Ning
- 2008
- Journal of Applied Physics
PaperVibrating-reed measurements of the Δe effect and internal friction of the higly magnetostrictive alloy Fe2(Tb0.2Dy 0.22Ho0.58)
- B.S. Berry
- W.C. Pritchet
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- 2008
- Journal of Applied Physics
PaperAnalysis of resonance phenomena in Josephson interferometer devices
- H.H. Zappe
- B.S. Landman
- 2008
- Journal of Applied Physics
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- D.J. DiMaria
- R.F. DeKeersmaecker
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- 2008
- Journal of Applied Physics
PaperAdiabatic and pendulum approximations to the retarded Josephson equation
- W.A. Schlup
- 2008
- Journal of Applied Physics
PaperYoung's modulus measurements of thin films using micromechanics
- Kurt E. Petersen
- C.R. Guarnieri
- 2008
- Journal of Applied Physics
PaperMicrostructure and Schottky barrier height of iridium silicides formed on silicon
- I. Ohdomari
- T.S. Kuan
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- 2008
- Journal of Applied Physics
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